How Much Can Data Compressibility Help to Improve NAND Flash Memory Lifetime?
نویسندگان
چکیده
Although data compression can benefit flash memory lifetime, little work has been done to rigorously study the full potential of exploiting data compressibility to improve memory lifetime. This work attempts to fill this missing link. Motivated by the fact that memory cell damage strongly depends on the data content being stored, we first propose an implicit data compression approach (i.e., compress each data sector but do not increase the number of sectors per flash memory page) as a complement to conventional explicit data compression that aims to increase the number of sectors per flash memory page. Due to the runtime variation of data compressibility, each flash memory page almost always contains some unused storage space left by compressed data sectors. We develop a set of design strategies for exploiting such unused storage space to reduce the overall memory physical damage. We derive a set of mathematical formulations that can quantitatively estimate flash memory physical damage reduction gained by the proposed design strategies for both explicit and implicit data compression. Using 20nm MLC NAND flash memory chips, we carry out extensive experiments to quantify the content dependency of memory cell damage, based upon which we empirically evaluate and compare the effectiveness of the proposed design strategies under a wide spectrum of data compressibility characteristics.
منابع مشابه
Exploiting Memory Device Wear-Out Dynamics to Improve NAND Flash Memory System Performance
This paper advocates a device-aware design strategy to improve various NAND flash memory system performance metrics. It is well known that NAND flash memory program/erase (PE) cycling gradually degrades memory device raw storage reliability, and sufficiently strong error correction codes (ECC) must be used to ensure the PE cycling endurance. Hence, memory manufacturers must fabricate enough num...
متن کاملErrors in Flash-Memory-Based Solid-State Drives: Analysis, Mitigation, and Recovery
NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology scaling; and (2) multi-level (e.g., MLC, TLC) cell data coding. Unfortunately, the reliability of raw data stored in flash memory has also continued to become ...
متن کاملExploiting Heat-Accelerated Flash Memory Wear-Out Recovery to Enable Self-Healing SSDs
This paper proposes a self-healing solid-state drive (SSD) design strategy that exploits heat-accelerated recovery of NAND flash memory cell wear-out to improve SSD lifetime. The key is to make each NAND flash memory chip self-healable by stacking an extra heater die, and to employ system-level redundancy to ensure SSD data storage integrity when one memory chip is being self-heated for memory ...
متن کاملLifetime improvement of NAND flash-based storage systems using dynamic program and erase scaling
The cost-per-bit of NAND flash memory has been continuously improved by semiconductor process scaling and multi-leveling technologies (e.g., a 10 nm-node TLC device). However, the decreasing lifetime of NAND flash memory as a side effect of recent advanced technologies is regarded as a main barrier for a wide adoption of NAND flash-based storage systems. In this paper, we propose a new system-l...
متن کاملA page-granularity wear-leveling (PGWL) strategy for NAND flash memory-based sink nodes in wireless sensor networks
Sink nodes are the data centers of wireless sensor networks (WSNs), and the storage management scheme for such nodes is vital, particularly in applications such as wireless multimedia sensor networks that involve the collection of massive amounts of data. NAND flash memory is often employed in sink nodes because of its excellent characteristics. Because the lifetime of NAND flash memory is high...
متن کامل